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DDTD114GU Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DDTD114GU
Description  NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DDTD114GU Datasheet(HTML) 2 Page - Diodes Incorporated

  DDTD114GU Datasheet HTML 1Page - Diodes Incorporated DDTD114GU Datasheet HTML 2Page - Diodes Incorporated DDTD114GU Datasheet HTML 3Page - Diodes Incorporated  
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DS30382 Rev. 7 - 2
2 of 3
www.diodes.com
DDTD (xxxx) U
© Diodes Incorporated
Electrical Characteristics
@TA = 25°C unless otherwise specified
R1, R2 Types
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
Vl(off)
0.5
0.5
0.5
0.5
0.5
0.3
0.3
0.3
⎯
⎯
V
VCC = 5V, IO = 100μA
Input Voltage
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
Vl(on)
⎯
⎯
3.0
3.0
3.0
3.0
3.0
2.0
2.0
2.0
V
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 10mA
VO = 0.3V, IO = 30mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
Output Voltage
VO(on)
⎯
⎯
0.3V
V
IO/Il = 50mA/2.5mA
Input Current
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
Il
⎯
⎯
7.2
3.8
1.8
0.88
28
7.2
3.6
2.4
mA
VI = 5V
Output Current
IO(off)
⎯
⎯
0.5
μA VCC = 50V, VI = 0V
DC Current Gain
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
Gl
33
39
47
56
47
56
56
56
⎯
⎯
⎯
VO = 5V, IO = 50mA
Gain-Bandwidth Product*
fT
⎯
200
⎯
MHz VCE = 10V, IE = 5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics
@TA = 25°C unless otherwise specified
R1-Only, R2-Only Types
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
50
⎯
⎯
V
IC = 50μA
Collector-Emitter Breakdown Voltage
BVCEO
40
⎯
⎯
V
IC = 1mA
Emitter-Base Breakdown Voltage
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
BVEBO
5
⎯
⎯
V
IE = 50μA
IE = 50μA
IE = 50μA
IE = 720μA
Collector Cutoff Current
ICBO
⎯
⎯
0.5
μA
VCB = 50V
Emitter Cutoff Current
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
IEBO
⎯
⎯
⎯
300
⎯
0.5
0.5
0.5
580
μA
VEB = 4V
Collector-Emitter Saturation Voltage
VCE(sat)
⎯
⎯
0.3
V
IC = 50mA, IB = 2.5mA
DC Current Transfer Ratio
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
hFE
100
100
100
56
250
250
250
⎯
600
600
600
⎯
⎯
IC = 5mA, VCE = 5V
Gain-Bandwidth Product*
fT
⎯
200
⎯
MHz VCE = 10V, IE = -5mA, f = 100MHz
* Transistor - For Reference Only


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