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DDTD114GU Datasheet(PDF) 2 Page - Diodes Incorporated |
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DDTD114GU Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 3 page DS30382 Rev. 7 - 2 2 of 3 www.diodes.com DDTD (xxxx) U © Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified R1, R2 Types Characteristic Symbol Min Typ Max Unit Test Condition DDTD113EU DDTD123EU DDTD143EU DDTD114EU DDTD122JU DDTD113ZU DDTD123YU DDTD133HU Vl(off) 0.5 0.5 0.5 0.5 0.5 0.3 0.3 0.3 ⎯ ⎯ V VCC = 5V, IO = 100μA Input Voltage DDTD113EU DDTD123EU DDTD143EU DDTD114EU DDTD122JU DDTD113ZU DDTD123YU DDTD133HU Vl(on) ⎯ ⎯ 3.0 3.0 3.0 3.0 3.0 2.0 2.0 2.0 V VO = 0.3V, IO = 20mA VO = 0.3V, IO = 20mA VO = 0.3V, IO = 20mA VO = 0.3V, IO = 10mA VO = 0.3V, IO = 30mA VO = 0.3V, IO = 20mA VO = 0.3V, IO = 20mA VO = 0.3V, IO = 20mA Output Voltage VO(on) ⎯ ⎯ 0.3V V IO/Il = 50mA/2.5mA Input Current DDTD113EU DDTD123EU DDTD143EU DDTD114EU DDTD122JU DDTD113ZU DDTD123YU DDTD133HU Il ⎯ ⎯ 7.2 3.8 1.8 0.88 28 7.2 3.6 2.4 mA VI = 5V Output Current IO(off) ⎯ ⎯ 0.5 μA VCC = 50V, VI = 0V DC Current Gain DDTD113EU DDTD123EU DDTD143EU DDTD114EU DDTD122JU DDTD113ZU DDTD123YU DDTD133HU Gl 33 39 47 56 47 56 56 56 ⎯ ⎯ ⎯ VO = 5V, IO = 50mA Gain-Bandwidth Product* fT ⎯ 200 ⎯ MHz VCE = 10V, IE = 5mA, f = 100MHz * Transistor - For Reference Only Electrical Characteristics @TA = 25°C unless otherwise specified R1-Only, R2-Only Types Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 50 ⎯ ⎯ V IC = 50μA Collector-Emitter Breakdown Voltage BVCEO 40 ⎯ ⎯ V IC = 1mA Emitter-Base Breakdown Voltage DDTD123TU DDTD143TU DDTD114TU DDTD114GU BVEBO 5 ⎯ ⎯ V IE = 50μA IE = 50μA IE = 50μA IE = 720μA Collector Cutoff Current ICBO ⎯ ⎯ 0.5 μA VCB = 50V Emitter Cutoff Current DDTD123TU DDTD143TU DDTD114TU DDTD114GU IEBO ⎯ ⎯ ⎯ 300 ⎯ 0.5 0.5 0.5 580 μA VEB = 4V Collector-Emitter Saturation Voltage VCE(sat) ⎯ ⎯ 0.3 V IC = 50mA, IB = 2.5mA DC Current Transfer Ratio DDTD123TU DDTD143TU DDTD114TU DDTD114GU hFE 100 100 100 56 250 250 250 ⎯ 600 600 600 ⎯ ⎯ IC = 5mA, VCE = 5V Gain-Bandwidth Product* fT ⎯ 200 ⎯ MHz VCE = 10V, IE = -5mA, f = 100MHz * Transistor - For Reference Only |
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