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DMMT3906 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMMT3906 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 4 page Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage V(BR)CBO -40 ⎯ V IC = -10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ⎯ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -10μA, IC = 0 Collector Cutoff Current ICEX ⎯ -50 nA VCE = -30V, VEB(OFF) = -3.0V Base Cutoff Current IBL ⎯ -50 nA VCE = -30V, VEB(OFF) = -3.0V ON CHARACTERISTICS (Note 6) DC Current Gain (Note 7) hFE 60 80 100 60 30 ⎯ ⎯ 300 ⎯ ⎯ ⎯ IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -100mA, VCE = -1.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.25 -0.40 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(SAT) -0.65 ⎯ -0.85 -0.95 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ⎯ 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 2.0 12 k Ω Voltage Feedback Ratio hre 0.1 10 x 10 -4 Small Signal Current Gain hfe 100 400 ⎯ Output Admittance hoe 3.0 60 μS VCE = 10V, IC = 1.0mA, f = 1.0kHz Current Gain-Bandwidth Product fT 250 ⎯ MHz VCE = -20V, IC = -10mA, f = 100MHz Noise Figure NF ⎯ 4.0 dB VCE = -5.0V, IC = -100μA, RS = 1.0kΩ, f = 1.0kHz SWITCHING CHARACTERISTICS Delay Time td ⎯ 35 ns Rise Time tr ⎯ 35 ns VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA Storage Time ts ⎯ 225 ns Fall Time tf ⎯ 75 ns VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. The DC current gain, hFE, is matched at IC = -10mA and VCE = -1.0V with typical matched tolerances of 1% and maximum of 2%. 0 50 100 25 50 75 100 125 150 175 200 T , AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs. Ambient Temperature, Total Device A 150 200 250 300 350 0 1 100 10 0.1 1 10 100 V , COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage CB DS30293 Rev. 6 - 2 2 of 4 www.diodes.com DMMT3906 © Diodes Incorporated |
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