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CM150DUS-12F Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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CM150DUS-12F Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
3 / 8 page MITSUBISHI IGBT MODULES CM150DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE 3 February-2011 RECOMMENDED OPERATING CONDITIONS (Ta=25 °C) Limits Symbol Item Conditions Min. Typ. Max. Unit VCC (DC) Supply voltage Applied across C1-E2 - 300 400 VGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 13.5 15.0 16.5 V RG External gate resistance Per switch 4.2 - 42 Ω Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). Note.2: Case temperature (TC) measured point is base plate side. (Refer to the figure of chip location) Note.3: Case temperature (TC') and heat sink temperature (T s ') are defined on the each surface of base plate and heat sink just under the chips. (Refer to the figure of chip location) The heat sink thermal resistance {Rth(s-a)} should measure just under the chips. Note.4: Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T jm a x rating. Note.5: Junction temperature (T j ) should not increase beyond T jm a x rating. Note.6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of test circuit) Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). Note.8: Base plate flatness measurement points are as in the following figure. Bottom Bottom Y X +: Convex -: Concave 3 mm Bottom 3 mm 3 mm CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm Case Temperature (TC) measured point (Base plate side) Tr1/Tr2: IGBT, Di1/Di2: FWDi |
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