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2SC3419 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SC3419 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SC3419 2004-07-07 3 Collector-emitter voltage VCE (V) IC – VCE Collector current IC (mA) hFE – IC Collector current IC (mA) VCE (sat) – IC Base-emitter voltage VBE (V) IC – VBE Ambient temperature Ta (°C) PC – Ta Safe Operating Area Collector-emitter voltage VCE (V) 1.0 0 0 Common emitter Tc = 25°C 1000 600 3 4 6 5 10 6 4 12 20 IB = 2 mA 0 8 2 1 200 400 800 −25 Common emitter IC/IB = 10 3 0.01 0.05 0.1 30 100 Tc = 100°C 25 1000 300 10 0.03 0.3 0.5 (1) Tc = Ta Infinite heat sink (2) No heat sink 0 80 120 200 160 40 8 0 4 2 6 (1) (2) 25 10 300 Common emitter VCE = 2 V 10 30 50 100 1000 30 100 1000 Tc = 100°C −25 300 3 500 −25 Common emitter VCE = 2 V 1000 400 600 800 Tc = 100°C 25 200 0.2 0.4 0.8 1.2 1.0 0.6 0 0 0.3 1 3 10 30 20 50 300 500 1000 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 100 3000 100 IC max (pulsed)* IC max (continuous)* DC operation Ta = 25°C VCEO max 1 ms* 10 ms* 100 ms* DC operation Tc = 25°C |
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