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2SB908 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SB908 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SB908 2010-02-05 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB908 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD1223 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −100 V Collector-emitter voltage VCEO −80 V Emitter-base voltage VEBO −5 V Collector current IC −4 A Base current IB −0.4 A Ta = 25°C 1.0 Collector power dissipation Tc = 25°C PC 15 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) BASE EMITTER ≈ 4.5 kΩ ≈ 300 Ω COLLECTOR |
Similar Part No. - 2SB908_10 |
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Similar Description - 2SB908_10 |
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