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2SB906 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SB906
Description  Audio Frequency Power Amplifier Application
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SB906 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SB906
2010-02-05
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −60 V, IE = 0
−100
μA
Emitter cut-off current
IEBO
VEB = −7 V, IC = 0
−100
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = −50 mA, IB = 0
−60
V
hFE (1)
(Note)
VCE = −5 V, IC = −0.5 A
60
200
DC current gain
hFE (2)
VCE = −5 V, IC = −3 A
20
Collector-emitter saturation voltage
VCE (sat)
IC = −3 A, IB = −0.3 A
−1.0
−1.7
V
Base-emitter voltage
VBE
VCE = −5 V, IC = −0.5 A
−1.0
−1.5
V
Transition frequency
fT
VCE = −5 V, IC = −0.5 A
9
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
90
pF
Turn-on time
ton
0.4
Storage time
tstg
1.7
Switching time
Fall time
tf
−IB1 = IB2 = 0.2 A, DUTY CYCLE ≤ 1%
0.5
μs
Note: hFE (1) classification O: 60 to 120, Y: 100 to 200
Marking
B906
Lot No.
Note 1
Characteristics
indicator
Part No. (or abbreviation code)
20 μs
INPUT
IB1
IB2
OUTPUT
VCC = −30 V
IB2
Note 1:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in
electrical and electronic equipment.


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