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DMN6068SE Datasheet(PDF) 4 Page - Diodes Incorporated |
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DMN6068SE Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 9 page DMN6068SE Document Number DS32033 Rev. 2 - 2 4 of 9 www.diodes.com January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6068SE Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V ID = 250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 μA VDS= 60V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 1.0 ⎯ 3.0 V ID= 250μA, VDS= VGS Static Drain-Source On-Resistance (Note 8) RDS (ON) ⎯ ⎯ 0.068 Ω VGS= 10V, ID= 12A 0.100 VGS= 4.5V, ID= 6A Forward Transconductance (Notes 8 & 9) gfs ⎯ 19.7 ⎯ S VDS= 15V, ID= 12A Diode Forward Voltage (Note 8) VSD ⎯ 0.98 1.15 V IS= 12A, VGS= 0V Reverse recovery time (Note 9) trr 145 ⎯ ns IS= 12A, di/dt= 100A/μs Reverse recovery charge (Note 9) Qrr ⎯ 929 ⎯ nC DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss ⎯ 502 ⎯ pF VDS= 30V, VGS= 0V f= 1MHz Output Capacitance Coss ⎯ 45.7 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 27.1 ⎯ pF Total Gate Charge (Note 10) Qg ⎯ 5.55 ⎯ nC VGS= 4.5V VDS= 30V ID= 12A Total Gate Charge (Note 10) Qg ⎯ 10.3 ⎯ nC VGS= 10V Gate-Source Charge (Note 10) Qgs ⎯ 1.6 ⎯ nC Gate-Drain Charge(Note 10) Qgd ⎯ 3.5 ⎯ nC Turn-On Delay Time (Note 10) tD(on) ⎯ 3.6 ⎯ ns VDD= 30V, VGS= 10V ID= 12A, RG ≅ 6.0Ω Turn-On Rise Time (Note 10) tr ⎯ 10.8 ⎯ ns Turn-Off Delay Time (Note 10) tD(off) ⎯ 11.9 ⎯ ns Turn-Off Fall Time (Note 10) tf ⎯ 8.7 ⎯ ns Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures. |
Similar Part No. - DMN6068SE_11 |
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Similar Description - DMN6068SE_11 |
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