DMN6066SSD

Document Number DS32109 Rev 1 - 2

4 of 8

www.diodes.com

March 2010

© Diodes Incorporated

A Product Line of

Diodes Incorporated

DMN6066SSD

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

0.5

μA

Gate-Source Leakage

⎯

⎯

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1.0

⎯

3.0

V

Static Drain-Source On-Resistance (Note 9)

⎯

0.048

0.066

Ω

0.068

0.097

Forward Transconductance (Notes 9 & 10)

⎯

19.2

⎯

S

Diode Forward Voltage (Note 9)

⎯

0.89

1.15

V

Reverse recovery time (Note 10)

22.2

⎯

ns

Reverse recovery charge (Note 10)

⎯

16.9

⎯

nC

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

⎯

502

⎯

pF

f= 1MHz

Output Capacitance

⎯

45.7

⎯

pF

Reverse Transfer Capacitance

⎯

27.1

⎯

pF

Total Gate Charge (Note 11)

⎯

5.4

⎯

nC

Total Gate Charge (Note 11)

⎯

10.3

⎯

nC

Gate-Source Charge (Note 11)

⎯

1.7

⎯

nC

Gate-Drain Charge (Note 11)

⎯

3.2

⎯

nC

Turn-On Delay Time (Note 11)

⎯

2.7

⎯

ns

Turn-On Rise Time (Note 11)

⎯

2.4

⎯

ns

Turn-Off Delay Time (Note 11)

⎯

14.7

⎯

ns

Turn-Off Fall Time (Note 11)

⎯

5.4

⎯

ns

Notes:

9.

Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%

10. For design aid only, not subject to production testing.

11. Switching characteristics are independent of operating junction temperatures.