iC-GF

TRANSCEIVER

Rev C1, Page 9/26

ELECTRICAL CHARACTERISTICS

Operating Conditions: VBO = 9...30 V (referenced to VN), Tj = -40...125 °C, RSET = 6.8 kΩ ±1%, unless otherwise stated

Item

Symbol

Parameter

Conditions

Unit

No.

Min.

Typ.

Max.

603

Vt()hys

Hysteresis at IN1/TX, IN2/MOSI,

OEN, SCLK, NCS

Vt()hys = Vt()hi − Vt()lo

200

280

mV

604

Ipd()

Pull-Down Current at IN1/TX,

IN2/MOSI

V() > 0.4 V

10

168

µA

605

Ipd()

Pull-Down Current at NCS, SCLK SPI mode, V() > 0.4 V

10

40

µA

606

Ipd(OEN)

Pull-Down Current at OEN

V(OEN) > 0.4 V

1

6

µA

607

Vahi()

Input Threshold hi at QCFG1,

QCFG2, INV1

52

64

69

%VCC3

608

Vahi()hys

Hysteresis hi at QCFG1, QCFG2,

INV1

3

7

%VCC3

609

Valo()

Input Threshold lo at QCFG1,

QCFG2, INV1

24

29

34

%VCC3

610

Valo()hys

Hysteresis lo at QCFG1, QCFG2,

INV1

3

7

%VCC3

611

Voc()

Open Circuit Voltage at QCFG1,

QCFG2, INV1

42

46.5

51

%VCC3

612

Ri()

Internal Resistance at QCFG1,

QCFG2, INV1

Referenced to VCC3

40

85

190

kΩ

Referenced to GND

40

85

190

kΩ

613

tsup()

Permissible Spurious Pulse

Width at IN1/TX, IN2, INV1/ESPI

No activity triggered, DEFAULT mode or SPI

mode with FCFG(1:0) = 10

2.5

µs

614

ttrig()

Required Pulse Width at IN1/TX,

IN2, INV1/ESPI

Activity triggered, DEFAULT mode or SPI mode

with FCFG(1:0) = 10

6

µs

615

tsup()

Permissible Spurious Pulse

Width at QCFG1, QCFG2, OEN

No activity triggered, DEFAULT mode or SPI

mode with FCFG(1:0) = 10

5

µs

616

ttrig()

Required Pulse Width at QCFG1,

QCFG2, OEN

Activity triggered, DEFAULT mode or SPI mode

with FCFG(1:0) = 10

12

µs

617

tpio

Propagation Delay

IN1 → QP1, QN1

IN2 → QP2, QN2

INV1 = low or high, DEFAULT mode or SPI

mode with FCFG(1:0) = 10

2.4

10

µs

Error Output NOVL/NDIAG, NUVD/MISO

701

Vs()lo

Saturation Voltage lo at NOVL,

NUVD

DEFAULT mode, I() = 1.0 mA

0.4

V

702

Vs()lo

Saturation Voltage lo at NDIAG

SPI mode, I() = 1.0 mA

0.4

V

703

Isc()lo

Short Circuit Current lo in NOVL,

NUVD

DEFAULT mode, V() = 0.4 V...VCC

1.2

25

mA

704

Isc()lo

Short Circuit Current lo in NDIAG SPI mode, V() = 0.4 V...VCC

1.2

25

mA

705

Ilk()

Leakage Current in NOVL, NUVD DEFAULT mode, V() = 0 V...VCC, no error

-10

10

µA

706

Ilk()

Leakage Current in NDIAG

SPI mode, V() = 0 V...VCC, no error

-10

10

µA

707

Vs()hi

Saturation Voltage high at MISO

SPI mode, I(MISO) = -2 mA,

Vs(MISO)hi = VCC3 − V(MISO)

0.4

V

708

Vs()lo

Saturation Voltage low at MISO

SPI mode, I(MISO) = 2 mA

0.4

V

709

Isc()hi

Short Circuit current hi in MISO

SPI mode, V(MISO) = 0...VCC3 − 0.4 V

-40

mA

710

Isc()lo

Short Circuit current lo in MISO

SPI mode, V(MISO) = 0.4 V...VCC3

90

mA

711

tr(MISO)

Rise Time

SPI mode, Cl(MISO) = 30 pF,

0 → 90%VCC3

22

ns

712

tf(MISO)

Fall Time

SPI mode, 100 → 10%VCC3

16

ns

Feedback Channel CFI to CFO/RX

801

Vt1(CFI)hi Input Threshold 1 hi at CFI

VBR < 18 V

59

66

74

%VBR

802

Vt1(CFI)lo Input Threshold 1 lo at CFI

VBR < 18 V

44

50

56

%VBR

803

Vt2(CFI)hi Input Threshold 2 hi at CFI

VBR > 18 V

10.5

11.3

12

V

804

Vt2(CFI)lo Input Threshold 2 lo at CFI

VBR > 18 V

8.3

9

10.5

V

805

Vt()hys

Hysteresis at CFI

Vt(CFI)hys = Vt(CFI)hi − Vt(CFI)lo

1

V

806

Ipu(CFI)

Pull-Up Current at CFI

DEFAULT mode: CFP = hi,

V(CFI) = 0...VBR − 3 V

SPI mode: POL = 1, ENPUD = 1

-300

-40

µA