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2SA1015 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. 2SA1015
Description  Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1015 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SA1015
2007-11-01
1
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1015
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
• High voltage and high current: VCEO = −50 V (min),
IC = −150 mA (max)
• Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA
: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
• Low noise: NF = 1dB (typ.) (f = 1 kHz)
• Complementary to 2SC1815.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−150
mA
Base current
IB
−50
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −50 V, IE = 0
−0.1
μA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
−0.1
μA
hFE (1)
(Note)
VCE = −6 V, IC = −2 mA
70
400
DC current gain
hFE (2)
VCE = −6 V, IC = −150 mA
25
80
Collector-emitter saturation voltage
VCE (sat)
IC = −100 mA, IB = −10 mA
−0.1
−0.3
V
Base-emitter saturation voltage
VBE (sat)
IC = −100 mA, IB = −10 mA
−1.1
V
Transition frequency
fT
VCE = −10 V, IC = −1 mA
80
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
4
7
pF
Base intrinsic resistance
rbb’
VCE = −10 V, IE = 1 mA, f = 30 MHz
30
Ω
Noise figure
NF
VCE = −6 V, IC = −0.1 mA, RG = 10 kΩ,
f
= 1 kHz
1.0
10
dB
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)


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