STTA2006P datasheet(3/8 Pages) STMICROELECTRONICS

Part #	STTA2006P

Description	TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STTA2006P/PI

3/8

P1(W)

02468

10

12

14

16

18

20

0

10

20

30

40

50

=0.2

=0 . 5

=1

IF(av)(A)

T

=tp/T

tp

=0.1

Fig. 1: Conduction losses versus average current.

VFM(V)

0.1

1

10

100 200

0.00

0.50

1.00

1.50

2.00

2.50

3.00

3.50

MAXIMUM VALUES

IFM(A)

Tj=125 C

o

Fig. 2: Forward voltage drop versus forward

current.

Fig. 3: Relative variation of thermal transient

impedance junction to case versus pulse duration.

IRM(A)

0

100 200 300 400 500 600 700 800 900 1000

0.0

2.5

5.0

7.5

10.0

12.5

15.0

17.5

20.0

22.5

25.0

27.5

30.0

32.5

35.0

37.5

40.0

VR=400V

90% CONFIDENCE Tj=125 C

o

dIF/dt(A/ s)

IF=20A

IF=10A

IF=40A

Fig. 4: Peak reverse recovery current versus

dIF/dt.

trr(ns)

0

100 200 300 400 500 600 700 800 900 1000

0

25

50

75

100

125

150

175

200

225

250

VR=400V

90% CONFIDENCE Tj=125 C

o

dIF/dt(A/ s)

IF=20A

IF=10A

IF=40A

Fig. 5: Reverse recovery time versus dIF/dt.

Sfactor

0

100 200 300 400 500 600 700 800 900 1000

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

dIF/dt(A/ s)

VR=400V

IF<2xIF(av)

Typical values Tj=125 C

o

Fig. 6: Softness factor (tb/ta) versus dIF/dt.

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