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STTA2006P Datasheet(PDF) 3 Page - STMicroelectronics |
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STTA2006P Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 8 page Obsolete Product(s) - Obsolete Product(s) STTA2006P/PI 3/8 P1(W) 02468 10 12 14 16 18 20 0 10 20 30 40 50 =0.2 =0 . 5 =1 IF(av)(A) T =tp/T tp =0.1 Fig. 1: Conduction losses versus average current. VFM(V) 0.1 1 10 100 200 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 MAXIMUM VALUES IFM(A) Tj=125 C o Fig. 2: Forward voltage drop versus forward current. Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration. IRM(A) 0 100 200 300 400 500 600 700 800 900 1000 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 32.5 35.0 37.5 40.0 VR=400V 90% CONFIDENCE Tj=125 C o dIF/dt(A/ s) IF=20A IF=10A IF=40A Fig. 4: Peak reverse recovery current versus dIF/dt. trr(ns) 0 100 200 300 400 500 600 700 800 900 1000 0 25 50 75 100 125 150 175 200 225 250 VR=400V 90% CONFIDENCE Tj=125 C o dIF/dt(A/ s) IF=20A IF=10A IF=40A Fig. 5: Reverse recovery time versus dIF/dt. Sfactor 0 100 200 300 400 500 600 700 800 900 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 dIF/dt(A/ s) VR=400V IF<2xIF(av) Typical values Tj=125 C o Fig. 6: Softness factor (tb/ta) versus dIF/dt. |
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