SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

Datasheet 5030, Preliminary

• 221 West Industry Court

Deer Park, NY 11729

(631) 586 7600 FAX (631) 242 9798

•

• World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com •

Page 1

SPM4007010

Dual MOSFET BRIDGE, With Gate Driver

DESCRIPTION: A 100 VOLT, 7.5 AMP, DUAL MOSFET BRIDGE

A high density Dual H-Bridge capabable of driving 7.5A peak at 100V. This small

footprint dual bridge contains low Rdson power FETs , FET drivers and precision

current sense reistors. The device does not need heat sinking and is housed in an

encapsulated sealed enclosure. The drive input signals are TTL compatable.

ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE

(Tj=25

P

R

S

L

M

N

T

P

M

X

U

T

MOSFET SPECIFICATIONS (Per Device)

Drain-to-Source Breakdown Voltage

100

-

-

V

Continuos Drain Current

-

-

7.5

4.8

A

Pulsed Drain Current, Pulse Width limited to 1 msec

-

-

50

A

Zero Gate Voltage Drain Current

-

-

1

250

uA

uA

Static Drain-to-Source On Resistance,

-

0.019

0.035

0.023

.043

Ω

Maximum Thermal Resistance

-

-

35

Maximum operating Junction Temperature

-40

-

150

Maximum Storage Junction Temperature

-55

-

150

Rise Time

tr

30

ns

Fall Time

tf

30

ns