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SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 1015, REV. -

HERMETIC POWER MOSFET

N-CHANNEL

FEATURES:

DS (on)

MAXIMUM RATINGS

ALL RATINGS ARE AT T

RATING

SYMBOL

MIN.

TYP.

MAX.

UNITS

GATE TO SOURCE VOLTAGE

-

-

–20

Volts

ON-STATE DRAIN CURRENT

-

-

50

Amps

PULSED DRAIN CURRENT

-

-

200

Amps

OPERATING AND STORAGE TEMPERATURE

-55

-

+150

•C

TOTAL DEVICE DISSIPATION

-

-

460

Watts

THERMAL RESISTANCE, JUNCTION TO CASE

-

-

0.27

•C/W

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNITS

DRAIN TO SOURCE BREAKDOWN VOLTAGE

mA

200

-

-

Volts

STATIC DRAIN TO SOURCE ON STATE RESISTANCE

-

-

0.045

W

GATE THRESHOLD VOLTAGE

2.0

-

4.0

Volts

FORWARD TRANSCONDUCTANCE

26

32

-

S(1/

W)

ZERO GATE VOLTAGE DRAIN CURRENT

•C

•C

-

-

200

1000

mA

GATE TO SOURCE LEAKAGE FORWARD

GATE TO SOURCE LEAKAGE REVERSE

-

-

100

-100

nA

TURN ON DELAY TIME

œ

RISE TIME

œI

D25

TURN OFF DELAY TIME

FALL TIME

W

-

18

15

72

16

25

20

90

25

nsec

DIODE FORWARD VOLTAGE

Pulse test, t

ˆ 300 ms, duty cycle d ˆ 2 %

-

-

1.5

Volts

REVERSE RECOVERY TIME

•C,

di/dt = 100A/

msec

-

-

200

nsec

INPUT CAPACITANCE

OUTPUT CAPACITANCE

REVERSE TRANSFER CAPACITANCE

f = 1.0MHz

-

4400

800

280

-

pF

SHD239604