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SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 553, REV -

HERMETIC POWER MOSFET

N-CHANNEL

FEATURES:

MAXIMUM RATINGS

ALL RATINGS ARE AT T

RATING

SYMBOL

MIN.

TYP.

MAX.

UNITS

GATE TO SOURCE VOLTAGE

-

-

–20

Volts

CONTINUOUS DRAIN CURRENT

•C

-

-

5.5

Amps

PULSED DRAIN CURRENT

•C

-

-

22

Amps

OPERATING AND STORAGE TEMPERATURE

-55

-

+150

•C

TERMAL RESISTANCE JUNCTION TO CASE

-

-

0.62

•C/W

•C

-

-

200

Watts

ELECTRICAL CHARACTERISTICS

DRAIN TO SOURCE BREAKDOWN VOLTAGE

500

-

-

Volts

DRAIN TO SOURCE ON STATE RESISTANCE

-

-

0.85

W

GATE THRESHOLD VOLTAGE

mA

2.0

-

4.0

Volts

FORWARD TRANSCONDUCTANCE

˜ 15V, I

4.7

-

-

S(1/

W)

ZERO GATE VOLTAGE DRAIN CURRENT,

•C

•C

-

-

25

250

mA

GATE TO SOURCE LEAKAGE FORWARD

GATE TO SOURCE LEAKAGE REVERSE

-

-

100

-100

nA

TOTAL GATE CHARGE

GATE TO SOURCE CHARGE

GATE TO DRAIN CHARGE

-

-

68.5

12.5

40.5

nC

TURN ON DELAY TIME

RISE TIME

TURN OFF DELAY TIME

W,

FALL TIME

-

21

73

72

51

-

nsec

CONTIUOUS SOURCE CURRENT

-

5.5

-

Amps

DIODE FORWARD VOLTAGE

•C,I

-

-

1.5

Volts

REVERSE RECOVERY TIME

•C,

di/dt

ˆ = -100A/msec,

REVERSE RECOVERY CHARGE

ˆ 50V

-

-

700

8.9

nsec

mC

INPUT CAPACITANCE

OUTPUT CAPACITANCE

f = 1.0MHz

REVERSE TRANSFER CAPACITANCE

-

1300

310

120

-

pF

SHD219405