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SD060SB100B Datasheet(PDF) 1 Page - Sensitron |
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SD060SB100B Datasheet(HTML) 1 Page - Sensitron |
1 / 3 page SENSITRON SEMICONDUCTOR 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com SD060SB100A/B Technical Data Data Sheet 4960, Rev.- SILICON SCHOTTKY RECTIFIER DIE Low Forward Voltage Drop (175 C T J Operation) Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Soft Reverse Recovery at Low and High Temperature Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mechanically Stable during and after Packaging Maximum Ratings(1): Characteristics Symbol Condition Max. Units Peak Inverse Voltage VRWM - 100 V Max. Average Forward Current IF(AV) 50% duty cycle, rectangular wave form 3 A Max. Peak One Cycle Non- Repetitive Surge Current IFSM 8.3 ms, half Sine wave (1) 55 A Non-Repetitive Avalanche Energy EAS TJ = 25 C, I AS = 1.3 A, L = 10 mH 5.6 mJ Repetitive Avalanche Current IAR IAS decay linearly to 0 in 1 ms limited by T J max VA=1.5VR 1.3 A Max. Junction Temperature TJ - -65 to +175 C Max. Storage Temperature Tstg - -65 to +175 C Electrical Characteristics(1): Characteristics Symbol Condition Max. Units Max. Forward Voltage Drop VF1 @ 3A, Pulse, TJ = 25 C 0.84 V VF2 @ 3A, Pulse, TJ = 125 C 0.68 V Max. Reverse Current IR1 @VR = 100V, Pulse, TJ = 25 C 0.07 mA IR2 @VR = 100V, Pulse, TJ = 125 C 1.6 mA Max. Junction Capacitance CT @VR = 5V, TC = 25 C fSIG = 1MHz, VSIG = 50mV (p-p) 100 pF (1) in SHD package |
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