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SSM6L13TU Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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SSM6L13TU Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 8 page  SSM6L13TU 2010-07-10 2 Q1 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 20 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 1 mA, VGS = − 12 V 10 ⎯ ⎯ V Drain cutoff current IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ± 12 V, VDS = 0 ⎯ ⎯ ± 1 μA Gate threshold voltage Vth VDS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V Forward transfer admittance ⏐Yfs⏐ VDS = 3 V, ID = 0.6 A (Note 2) 2.3 3.75 ⎯ S ID = 0.6 A, VGS = 4.0 V (Note 2) ⎯ 116 143 ID = 0.4 A, VGS = 2.5 V (Note 2) ⎯ 134 178 Drain-source ON-resistance RDS (ON) ID = 0.2 A, VGS = 1.8 V (Note 2) ⎯ 160 235 m Ω Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 268 ⎯ pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 44 ⎯ pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 34 ⎯ pF Turn-on time ton ⎯ 9 ⎯ Switching time Turn-off time toff VDD = 10 V, ID = 0.25 A, VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 16 ⎯ ns Drain-source forward voltage VDSF ID = − 0.8 A, VGS = 0 V (Note 2) ⎯ − 0.8 − 1.15 V Note 2 : Pulse test Q2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = − 1 mA, VGS = 0 − 20 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = − 1 mA, VGS = + 8 V − 12 ⎯ ⎯ V Drain cutoff current IDSS VDS = − 20 V, VGS = 0 ⎯ ⎯ − 10 μA Gate leakage current IGSS VGS = ± 8 V, VDS = 0 ⎯ ⎯ ± 1 μA Gate threshold voltage Vth VDS = − 3 V, ID = − 1 mA − 0.3 ⎯ − 1.0 V Forward transfer admittance ⏐Yfs⏐ VDS = − 3 V, ID = − 0.6 A (Note 2) 1.5 2.5 ⎯ S ID = − 0.6 A, VGS = − 4.0 V (Note 2) ⎯ 175 234 ID = − 0.4 A, VGS = − 2.5 V (Note 2) ⎯ 230 306 Drain-source ON-resistance RDS (ON) ID = − 0.1 A, VGS = − 1.8 V (Note 2) ⎯ 300 460 m Ω Input capacitance Ciss VDS = − 10 V, VGS = 0, f = 1 MHz ⎯ 250 ⎯ pF Output capacitance Coss VDS = − 10 V, VGS = 0, f = 1 MHz ⎯ 45 ⎯ pF Reverse transfer capacitance Crss VDS = − 10 V, VGS = 0, f = 1 MHz ⎯ 35 ⎯ pF Turn-on time ton ⎯ 12 ⎯ Switching time Turn-off time toff VDD = − 10 V, ID = − 0.25 A, VGS = 0 to − 2.5 V, RG = 4.7 Ω ⎯ 18 ⎯ ns Drain-source forward voltage VDSF ID = 0.8 A, VGS = 0 V (Note 2) ⎯ 0.85 1.2 V Note 2: Pulse test |
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