N-CHANNEL

POWER MOSET

IRFM140 / 2N7218

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8085

Issue 1

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

BVDSS

Drain-Source Breakdown

Voltage

VGS = 0

ID = 1.0mA

100

V

J

T

DSS

BV

∆

∆

Temperature Coefficent of

Breakdown Voltage

Reference

to 25°C

ID = 1.0mA

0.13

V/°C

VGS = 10V

ID = 20A

0.077

RDS(on)

(4)

Static Drain-Source

On-State Resistance

VGS = 10V

ID = 28A

0.125

Ω

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250µA

2

4

V

gfs

(4)

Forward Transconductance

VDS ≥ 15V

I DS = 21A

9.1

S( )

VGS = 0

VDS = 0.8BVDSS

25

IDSS

Zero Gate Voltage

Drain Current

TJ = 125°C

250

µA

IGSS

Forward Gate-Source

Leakage

VGS = 20V

100

IGSS

Reverse Gate-Source

Leakage

VGS = -20V

-100

nA

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VGS = 0

1660

Coss

Output Capacitance

VDS = 25V

550

Crss

Reverse Transfer

Capacitance

f = 1.0MHz

120

pF

Qg

Total Gate Charge

VGS = 10V

30

59

Qgs

Gate-Source Charge

ID = 28A

2.4

12

Qgd

Gate-Drain Charge

VDS = 0.5BVDSS

12

30.7

nC

td(on)

Turn-On Delay Time

21

tr

Rise Time

145

td(off)

Turn-Off Delay Time

64

tf

Fall Time

VDD = 50V

ID = 20A

RG = 9.1Ω

105

ns

SOURCE-DRAIN DIODE CHARACTERISTICS

IS

Continuous Source Current

28

ISM

(1)

Pulse Source Current

112

A

IS = 28A

TJ = 25°C

VSD

(4)

Diode Forward Voltage

VGS = 0

1.5

V

trr

(4)

Reverse Recovery Time

IS = 28A

TJ = 25°C

400

ns

Qrr

(4)

Reverse Recovery Charge

VDD ≤ 50V

di/dt = 100A/

µs

2.9

µC