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IRFM140 Datasheet(PDF) 1 Page - Seme LAB |
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IRFM140 Datasheet(HTML) 1 Page - Seme LAB |
1 / 3 page N-CHANNEL POWER MOSFET Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8085 Issue 1 Page 1 of 3 IRFM140 / 2N7218 • Low RDS(on) MOSFET Transistor In A Isolated Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (T C = 25°C unless otherwise stated) VDS Drain – Source Voltage 100V VGS Gate – Source Voltage ±20V ID Continuous Drain Current Tc = 25°C 28A ID Continuous Drain Current Tc = 100°C 20A IDM Pulsed Drain Current (1) 112A PD Total Power Dissipation at Tc = 25°C 100W Derate Above 25°C 0.8W/°C EAS Single Pulse Avalanche Energy (2) 250mJ dv/dt Peak Diode Recovery (3) 5.5V/ns TJ Junction Temperature Range -55 to +150°C Tstg Storage Temperature Range -55 to +150°C THERMAL PROPERTIES Symbols Parameters Min. Typ. Max. Units RθJC Thermal Resistance, Junction To Case 1.25 °C/W Notes Notes Notes Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) @VDD = 25V, L ≥ 470µH, Peak IL = 28A, Starting TJ = 25°C (3) @ ISD ≤ 28A, di/dt ≤ 170A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 9.1Ω (4) Pulse Width ≤ 300us, δ ≤ 2% |
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