N-CHANNEL

POWER MOSFET

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Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

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Document Number 8085

Issue 1

Page 1 of 3

IRFM140 / 2N7218

•

Low RDS(on) MOSFET Transistor

In A Isolated Hermetic Metal Package

•

Designed For Switching, Power Supply,

Motor Control and Amplifier Applications

•

Screening Options Available

C = 25°C unless otherwise stated)

VDS

Drain – Source Voltage

100V

VGS

Gate – Source Voltage

±20V

ID

Continuous Drain Current

Tc = 25°C

28A

ID

Continuous Drain Current

Tc = 100°C

20A

IDM

Pulsed Drain Current

(1)

112A

PD

Total Power Dissipation at

Tc = 25°C

100W

Derate Above 25°C

0.8W/°C

EAS

Single Pulse Avalanche Energy

(2)

250mJ

dv/dt

Peak Diode Recovery

(3)

5.5V/ns

TJ

Junction Temperature Range

-55 to +150°C

Tstg

Storage Temperature Range

-55 to +150°C

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ.

Max.

Units

RθJC

Thermal Resistance, Junction To Case

1.25

°C/W

Notes

Notes

Notes

Notes

(1)

Repetitive Rating: Pulse width limited by maximum junction temperature

(2)

@VDD = 25V, L ≥ 470µH, Peak IL = 28A, Starting TJ = 25°C

(3)

@ ISD ≤ 28A, di/dt ≤ 170A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 9.1Ω

(4)

Pulse Width ≤ 300us, δ ≤ 2%