DMD1029

DMD1029-A

Document Number 6859

Issue 3

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Power Dissipation

Drain – Source Breakdown Voltage *

Gate – Source Breakdown Voltage*

Drain Current*

Storage Temperature

Maximum Operating Junction Temperature

875W (438W -A Version)

70V

±20V

35A

–65 to 150°C

200°C

MECHANICAL DATA

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

350W – 28V – 175MHz

PUSH–PULL

APPLICATIONS

• VHF/UHF COMMUNICATIONS

from 1 MHz to 400 MHz

METAL GATE RF SILICON FET

TetraFET

* Per Side

FEATURES

• SUITABLE FOR BROAD BAND APPLICATIONS

• SIMPLE BIAS CIRCUITS

• ULTRA-LOW THERMAL RESISTANCE

• BeO FREE

• LOW Crss

• HIGH GAIN – 16 dB MINIMUM

M

K

J

I

O

N

A

C

(2 pls)

D

F

E

(4 pls)

B

G

(typ)

P

(2 pls)

1

5

4

3

2

H

D1

PIN 1

SOURCE (COMMON)

PIN 2

DRAIN 1

PIN 3

DRAIN 2

PIN 4

GATE 2

PIN 5

GATE 1

DIM

Millimetres

Tol.

Inches

Tol.

A

15.24

0.50

0.600

0.020

B

10.80

0.13

0.425

0.005

C

45°

5°

45°

5°

D

9.78

0.13

0.385

0.005

E

8.38

0.13

0.330

0.005

F

27.94

0.13

1.100

0.005

G

1.52R

0.13

0.060R

0.005

H

10.16

0.15

0.400

0.006

I

21.84

0.23

0.860

0.009

J

0.10

0.02

0.004

0.001

K

1.96

0.13

0.077

0.005

M

1.02

0.13

0.040

0.005

N

4.45

0.38

0.175

0.015

O

34.04

0.13

1.340

0.005

P

1.63R

0.13

0.064R

0.005