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DMD1029 Datasheet(PDF) 1 Page - Seme LAB |
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DMD1029 Datasheet(HTML) 1 Page - Seme LAB |
1 / 5 page DMD1029 DMD1029-A Document Number 6859 Issue 3 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. PD Power Dissipation BVDSS Drain – Source Breakdown Voltage * BVGSS Gate – Source Breakdown Voltage* ID(sat) Drain Current* Tstg Storage Temperature Tj Maximum Operating Junction Temperature 875W (438W -A Version) 70V ±20V 35A –65 to 150°C 200°C MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 350W – 28V – 175MHz PUSH–PULL APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz METAL GATE RF SILICON FET TetraFET * Per Side FEATURES • SUITABLE FOR BROAD BAND APPLICATIONS • SIMPLE BIAS CIRCUITS • ULTRA-LOW THERMAL RESISTANCE • BeO FREE • LOW Crss • HIGH GAIN – 16 dB MINIMUM M K J I O N A C (2 pls) D F E (4 pls) B G (typ) P (2 pls) 1 5 4 3 2 H D1 PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 PIN 3 DRAIN 2 PIN 4 GATE 2 PIN 5 GATE 1 DIM Millimetres Tol. Inches Tol. A 15.24 0.50 0.600 0.020 B 10.80 0.13 0.425 0.005 C 45° 5° 45° 5° D 9.78 0.13 0.385 0.005 E 8.38 0.13 0.330 0.005 F 27.94 0.13 1.100 0.005 G 1.52R 0.13 0.060R 0.005 H 10.16 0.15 0.400 0.006 I 21.84 0.23 0.860 0.009 J 0.10 0.02 0.004 0.001 K 1.96 0.13 0.077 0.005 M 1.02 0.13 0.040 0.005 N 4.45 0.38 0.175 0.015 O 34.04 0.13 1.340 0.005 P 1.63R 0.13 0.064R 0.005 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) |
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