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TP62601 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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TP62601 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 45 V BVCER IC = 20 mA RBE = 10 Ω 50 V BVCEO IC = 20 mA 22 V BVEBO IE = 250 µA 3.5 V ICBO VCB = 28 V 125 µA hFE VCE = 5.0 V IC = 100 mA 20 120 --- COB VCB = 28 V f = 1.0 MHz 5.0 pF POUT VCE = 20 V IE = 220 mA f = 2.0 GHz 1.25 W ft VCE = 20 V IE = 220 mA 2.7 GHz NPN RF POWER TRANSISTOR TP62601 DESCRIPTION: The ASI TP62601 is a Common Collector Device Designed for Applications up to 3.0 GHz Band. FEATURES INCLUDE: •••• Hermetic Package •••• Gold Metallization •••• Emitter Ballasting MAXIMUM RATINGS IC 0.5 A VCBO 45 V PDISS 11.6 W @ TC = 25 °C TJ -55 °C to+200 °C TSTG -55 °C to+200 °C θθθθ JC 15 °C/W PACKAGE STYLE 230 2L FLG 1 = EMITTER 2 = COLLECTOR 3 = BASE |
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