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IRFP4232PBF Datasheet(PDF) 6 Page - International Rectifier

Part # IRFP4232PBF
Description  Advanced process technology
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFP4232PBF Datasheet(HTML) 6 Page - International Rectifier

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IRFP4232PbF
6
www.irf.com
Fig 18.
Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
• di/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T

Inductor Current
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
tp
V(BR)DSS
IAS
RG
IAS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
VGS
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
1K
VCC
DUT
0
L


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