11ES1 - 11ES2

SILICON RECTIFIER DIODES

PRV : 100 - 200 Volts

Io : 1.0 Ampere

FEATURES :

* High current capability

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

MECHANICAL DATA :

* Case : DO-41 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight :

0.339 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

11ES1

11ES2

UNIT

Maximum Repetitive Peak Reverse Voltage

100

200

Volts

Maximum RMS Voltage

70

140

Volts

Maximum DC Blocking Voltage

100

200

Volts

Maximum Average Forward Current Ta = 50

°C

1.0

Amp.

Maximum Peak Forward Surge Current

45

Amps.

1.0

Volts

Maximum DC Reverse Current

at rated DC Blocking Voltage

50

µA

Junction Temperature Range

- 65 to + 175

°C

Storage Temperature Range

- 65 to + 175

°C

Page 1 of 2

Rev. 02 : March 25, 2005

RATING

DO - 41

Dimensions in inches and ( millimeters )

1.00 (25.4)

MIN.

0.107 (2.7)

0.080 (2.0)

0.205 (5.2)

0.166 (4.2)

1.00 (25.4)

MIN.

0.034 (0.86)

0.028 (0.71)