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IPB80N06S2-09 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IPB80N06S2-09 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 8 page IPB80N06S2-09 IPP80N06S2-09 9 Typ. Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(ON) = f(T j) V GS(th) = f(T j); V GS = V DS parameter: I D = 80 A; VGS = 10 V parameter: I D 11 Typ. capacitances 12 Typical forward diode characteristicis C = f(V DS); V GS = 0 V; f = 1 MHz IF = f(VSD) parameter: T j 25 °C 175 °C 10 3 10 2 10 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Ciss Coss Crss 10 4 10 3 10 2 0 5 10 15 20 25 30 V DS [V] 125 µA 625 µA 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 T j [°C] 4 6 8 10 12 14 16 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.0 page 6 2006-03-13 |
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