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IPB120N04S3-02 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPB120N04S3-02 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 9 page IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics 2) Input capacitance C iss - 11000 14300 pF Output capacitance C oss - 3000 3900 Reverse transfer capacitance Crss - 470 710 Turn-on delay time t d(on) -35 - ns Rise time t r -19 - Turn-off delay time t d(off) -57 - Fall time t f -18 - Gate Charge Characteristics 2) Gate to source charge Q gs -54 70 nC Gate to drain charge Q gd -38 67 Gate charge total Q g - 160 210 Gate plateau voltage V plateau -5 - V Reverse Diode 2) Diode continous forward current I S - - 120 A Diode pulse current I S,pulse - - 480 Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C - 0.83 1.2 V Reverse recovery time t rr -70 - ns Reverse recovery charge Q rr - 145 - nC 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 1) Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 306 A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos T C=25 °C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=80 A, R G=1.3 Ω V DD=32 V, I D=80 A, V GS=0 to 10 V V R=20 V, I F=I S, di F/dt =100 A/µs Rev. 1.0 page 3 2007-04-30 |
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