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IPB80N04S3-03 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IPB80N04S3-03 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 9 page IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 13 Typical avalanche energy 14 Typ. drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 80 A pulsed parameter: V DD V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 30 35 40 45 50 55 -60 -20 20 60 100 140 180 T j [°C] 8 V 32 V 0 2 4 6 8 10 12 0 20406080 100 Q gate [nC] 80 A 40 A 20 A 0 500 1000 1500 2000 2500 25 75 125 175 T j [°C] Rev. 1.0 page 7 2007-05-03 |
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