IPI45N06S3-16 datasheet(2/9 Pages) INFINEON

Part #	IPI45N06S3-16

Description	OptiMOS-T Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2 / 9 page

IPB45N06S3-16

IPI45N06S3-16, IPP45N06S3-16

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

2)

Thermal resistance, junction - case

R thJC

-

2.3

K/W

Thermal resistance, junction -

ambient, leaded

R thJA

--

62

SMD version, device on PCB

R thJA

minimal footprint

-

62

6 cm

2 cooling area5)

--

40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=250 µA

55

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=30 µA

2.1

3

4

Zero gate voltage drain current

I DSS

V DS=25 V, V GS=0 V,

T j=25 °C

-

0.1

1

µA

V DS=25 V, V GS=0 V,

T j=125 °C

1)

-

1

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

1

100

nA

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=23 A

-

13.5

15.7

m

Ω

V GS=10 V, I D=23 A,

SMD version

-

13.2

15.4

Values

Rev. 1.0

page 2

2005-11-25

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IPI45N06S3-16 Datasheet(PDF) 2 Page - Infineon Technologies AG

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