IPD096N08N3G datasheet(5/9 Pages) INFINEON

Part #	IPD096N08N3G

Description	OptiMOS(TM)3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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5 / 9 page

IPD096N08N3 G

5 Typ. output characteristics

6 Typ. drain-source on resistance

I D=f(V DS); T j=25 °C

R DS(on)=f(I D); T j=25 °C

parameter: V GS

7 Typ. transfer characteristics

8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max

g fs=f(I D); T j=25 °C

parameter: T j

5 V

5.5 V

6 V

6.5 V

7 V

8 V

10 V

0

5

10

15

20

25

30

0

50

100

150

200

250

300

I D [A]

25 °C

175 °C

0

40

80

120

02

46

8

V GS [V]

0

20

40

60

80

0

2040

6080

100

I D [A]

4.5 V

5 V

5.5 V

6 V

6.5 V

7 V

8 V

10 V

0

50

100

150

200

250

300

012

345

V DS [V]

Rev. 2.1

page 5

2008-10-20

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IPD096N08N3G Datasheet(PDF) 5 Page - Infineon Technologies AG

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