IPD053N06N3G datasheet(2/9 Pages) INFINEON

Part #	IPD053N06N3G

Description	OptiMOS(TM)3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPD053N06N3 G

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Power dissipation

P tot

T C=25 °C

115

W

Operating and storage temperature

T j, T stg

-55 ... 175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

-

1.3

K/W

SMD version, device on PCB

R thJA

minimal footprint

-

75

6 cm² cooling area

5)

--

50

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

60

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=58 µA

234

Zero gate voltage drain current

I DSS

V DS=60 V, V GS=0 V,

T j=25 °C

-

0.1

1

µA

V DS=60 V, V GS=0 V,

T j=125 °C

-

10

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

10

100

nA

R DS(on)

V GS=10 V, I D=90 A

-

4.2

5.3

m

Ω

Gate resistance

R G

-

1.2

-

Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=90 A

50

100

-

S

5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Value

Values

Drain-source on-state resistance

Rev.2.0

page 2

2008-11-25

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