IPD50R399CP datasheet(5/10 Pages) INFINEON

Part #	IPD50R399CP

Description	CoolMOSTM Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPD50R399CP

5 Typ. output characteristics

6 Typ. drain-source on-state resistance

I D=f(V DS); T j=150 °C

R DS(on)=f(I D); T j=150 °C

parameter: V GS

4.5 V

5 V

5.5 V

6 V

7 V

8 V

10 V

20 V

0

10

20

30

40

0

5

10

15

20

25

V

DS [V]

5.5 V

6 V

6.5 V

7 V

10 V

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

0

5

10

15

20

25

30

35

I

D [A]

Rev. 2.0

page 5

2007-11-21

7 Drain-source on-state resistance

8 Typ. transfer characteristics

R DS(on)=f(T j); I D=4.9 A; V GS=10 V

I D=f(V GS); |V DS|>2|I D|R DS(on)max

parameter: T j

typ

98 %

0

0.1

0.2

0.3

0.4

0.5

0.6

-60

-20

20

60

100

140

180

T

j [°C]

25 °C

150 °C

0

5

10

15

20

25

30

02468

10

V

GS [V]

4.5 V

5 V

5.5 V

6 V

7 V

8 V

10 V

20 V

0

10

20

30

40

0

5

10

15

20

25

V

DS [V]

5.5 V

6 V

6.5 V

7 V

10 V

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

0

5

10

15

20

25

30

35

I

D [A]

Rev. 2.0

page 5

2007-11-21

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