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IPD036N04LG Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPD036N04LG Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page Type IPD036N04L G OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC 1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant • Pb-free plating; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D V GS=10 V, T C=25 °C 90 A V GS=10 V, T C=100 °C 87 V GS=4.5 V, T C=25 °C 90 V GS=4.5 V, T C=100 °C 75 Pulsed drain current 2) I D,pulse T C=25 °C 400 Avalanche current, single pulse 3) I AS T C=25 °C 90 Avalanche energy, single pulse E AS I D=90 A, R GS=25 Ω 55 mJ Gate source voltage V GS ±20 V Value 1) J-STD20 and JESD22 V DS 40 V R DS(on),max 3.6 m Ω I D 90 A Product Summary Type IPD036N04L G Package PG-TO252-3 Marking 036N04L Rev. 1.0 page 1 2007-12-06 |
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