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NP82N06MLG Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # NP82N06MLG
Description  MOS FIELD EFFECT TRANSISTOR
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP82N06MLG Datasheet(HTML) 6 Page - Renesas Technology Corp

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Data Sheet D19802EJ1V0DS
4
NP82N06MLG, NP82N06NLG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
0
50
100
150
200
250
300
01
23
45
10 V
Pulsed
VGS = 5 V
VDS - Drain to Source Voltage - V
0.001
0.01
0.1
1
10
100
1000
01
23
4
5
VDS = 10 V
Pulsed
25
°C
−25°C
−55°C
TA = 175
°C
150
°C
125
°C
85
°C
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0
0.5
1
1.5
2
2.5
-75
-25
25
75
125
175
225
VDS = VGS
ID = 250
μA
Tch - Channel Temperature -
°C
1
10
100
0.1
1
10
100
1000
VDS = 5 V
Pulsed
TA =
−55°C
−25°C
25
°C
75
°C
125
°C
150
°C
175
°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
4
8
12
16
20
0.1
1
10
100
1000
VGS = 5 V
10 V
Pulsed
ID - Drain Current - A
0
10
20
30
0
4
8
12
16
20
ID = 82 A
41 A
16.4 A
Pulsed
VGS - Gate to Source Voltage - V


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