Data Sheet D19797EJ1V0DS

8

NP80N04MLG, NP80N04NLG, NP80N04PLG

PACKAGE DRAWINGS (Unit: mm)

TO-220 (MP-25K)

TO-262 (MP-25SK)

10.0

±0.2

3.8

±0.2

4.45

±0.2

1.3

±0.2

1.27

±0.2

0.8

±0.1

0.5

±0.2

2.5

±0.2

2.54 TYP.

2.54 TYP.

φ

1

4

23

1. Gate

2. Drain

3. Source

4. Fin (Drain)

10.0

±0.2

4.45

±0.2

1.3

±0.2

1.27

±0.2

0.8

±0.1

0.5

±0.2

2.5

±0.2

2.54 TYP.

2.54 TYP.

1

4

23

1. Gate

2. Drain

3. Source

4. Fin (Drain)

TO-263 (MP-25ZP)

EQUIVALENT CIRCUIT

No plating

7.88 MIN.

2.54

0.75 ±0.2

0.5

2

13

4

4.45 ±0.2

1.3 ±0.2

0.6 ±0.2

0 to 8˚

1. Gate

2. Drain

3. Source

4. Fin (Drain)

0.025

to 0.25

0.25

10.0 ±0.3

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.