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NP80N04MDG-S18-AY Datasheet(PDF) 3 Page - Renesas Technology Corp |
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NP80N04MDG-S18-AY Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 12 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. SWITCHING N-CHANNEL POWER MOS FET MOS FIELD EFFECT TRANSISTOR NP80N04MDG, NP80N04NDG, NP80N04PDG DATA SHEET Document No. D19795EJ1V0DS00 (1st edition) Date Published May 2009 NS Printed in Japan 2009 (TO-220) (TO-262) (TO-263) DESCRIPTION The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE NP80N04MDG-S18-AY Note TO-220 (MP-25K) typ. 1.9 g NP80N04NDG-S18-AY Note Tube 50 p/tube TO-262 (MP-25SK) typ. 1.8 g NP80N04PDG-E1B-AY Note NP80N04PDG-E2B-AY Note Pure Sn (Tin) Tape 1000 p/reel TO-263 (MP-25ZP) typ. 1.5 g Note Pb-free (This product does not contain Pb in the external electrode.) FEATURES • Logic level • Super low on-state resistance - NP80N04MDG, NP80N04NDG RDS(on)1 = 4.8 m Ω MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 m Ω MAX. (VGS = 4.5 V, ID = 35 A) - NP80N04PDG RDS(on)1 = 4.5 m Ω MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 8.7 m Ω MAX. (VGS = 4.5 V, ID = 35 A) • High current rating ID(DC) = ±80 A • Low input capacitance Ciss = 4600 pF TYP. • Designed for automotive application and AEC-Q101 qualified |
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