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IHW30N90R Datasheet(PDF) 5 Page - Infineon Technologies AG

Part # IHW30N90R
Description  Reverse Conducting IGBT with monolithic body diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IHW30N90R Datasheet(HTML) 5 Page - Infineon Technologies AG

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IHW30N90R
Soft Switching Series
q
Power Semiconductors
5
Rev. 2.2 Nov 08
0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
0A
10A
20A
30A
40A
50A
60A
70A
80A
15V
7V
9V
11V
13V
V
GE=20V
0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
0A
10A
20A
30A
40A
50A
60A
70A
80A
15V
7V
9V
11V
13V
V
GE=20V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
Figure 6. Typical output characteristic
(Tj = 175°C)
0V
2V
4V
6V
8V
0A
10A
20A
30A
40A
50A
60A
25°C
T
J=175°C
50°C
100°C
150°C
0.0V
0.5V
1.0V
1.5V
2.0V
I
C=30A
I
C=60A
I
C=15A
VGE, GATE-EMITTER VOLTAGE
TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)


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