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IHW30N90R Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IHW30N90R Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 12 page IHW30N90R Soft Switching Series q Power Semiconductors 3 Rev. 2.2 Nov 08 Dynamic Characteristic Input capacitance C iss - 2889 - Output capacitance C oss - 83 - Reverse transfer capacitance C rss V CE =25V, V GE =0V, f =1MHz - 79 - pF Gate charge Q Gate V CC =720V, IC =30A V GE =15V - 200 - nC Internal emitter inductance measured 5mm (0.197 in.) from case L E - 13 - nH Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. Typ. Max. Unit IGBT Characteristic Turn-off delay time t d(off) - 511 - Fall time t f - 24 - Turn-on energy E on - - - Turn-off energy E off - 1.46 - Total switching energy E ts T j=25°C V CC =600V, I C =30A, V GE =0/15V, R G= 15Ω - 1.46 - mJ Switching Characteristic, Inductive Load, at Tj=175 °C Value Parameter Symbol Conditions min. Typ. max. Unit IGBT Characteristic Turn-off delay time t d(off) - 594 - Fall time t f - 46 - Turn-on energy E on - - - Turn-off energy E off - 2.1 - Total switching energy E ts T j= 175 °C V CC =600V, I C =30A, V GE =0/15V, R G= 15Ω - 2.1 - mJ |
Similar Part No. - IHW30N90R_08 |
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Similar Description - IHW30N90R_08 |
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