IGC142T120T6RH

Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7693A, Edition 1 , 31.10 .2007

IGBT4 High Power Chip

This chip is used for:

•

medium / high power modules

FEATURES:

•

1200V Trench + Field Stop technology

•

•

soft turn off

•

positive temperature coefficient

•

easy paralleling

Applications:

•

medium / high power drives

G

C

E

Chip Type

Die Size

Package

IGC142T120T6RH

1200V 150A

11.31 x 12.56 mm

2

sawn on foil

MECHANICAL PARAMETER

Raster size

11.31 x 12.56

Emitter pad size (incl. gate pad)

11.04 x 9.80

Gate pad size

1.31 x 0.81

Area total / active

142.1 / 113.1

mm

2

Thickness

140

µm

Wafer size

150

mm

Flat position

90

grd

Max.possible chips per wafer

94

Passivation frontside

Photoimide

Pad metal

3200 nm AlSiCu

Backside metal

Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond

Electrically conductive glue or solder

Wire bond

Al, <500µm

Reject ink dot size

∅ 0.65mm ; max 1.2mm

Recommended storage environment

Store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C