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IGC142T120T6RH Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IGC142T120T6RH Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 5 page IGC142T120T6RH Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7693A, Edition 1 , 31.10 .2007 IGBT4 High Power Chip This chip is used for: • medium / high power modules FEATURES: • 1200V Trench + Field Stop technology • low VCEsat • soft turn off • positive temperature coefficient • easy paralleling Applications: • medium / high power drives G C E Chip Type VCE ICn Die Size Package IGC142T120T6RH 1200V 150A 11.31 x 12.56 mm 2 sawn on foil MECHANICAL PARAMETER Raster size 11.31 x 12.56 Emitter pad size (incl. gate pad) 11.04 x 9.80 Gate pad size 1.31 x 0.81 Area total / active 142.1 / 113.1 mm 2 Thickness 140 µm Wafer size 150 mm Flat position 90 grd Max.possible chips per wafer 94 Passivation frontside Photoimide Pad metal 3200 nm AlSiCu Backside metal Ni Ag –system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, <500µm Reject ink dot size ∅ 0.65mm ; max 1.2mm Recommended storage environment Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C |
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