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IDH09SG60C Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IDH09SG60C Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 7 page IDH09SG60C 1 Power dissipation 2 Diode forward current P tot=f(T C); parameter: RthJC(max) I F=f(T C) 4); T j≤175 °C; parameter: D = t p/T 3 Typ. forward characteristic 4 Typ. forward characteristic in surge current mode I F=f(VF); t p=400 µs; parameter:T j I F=f(VF); t p=400 µs; parameter: T j 0 20 40 60 80 100 120 25 50 75 100 125 150 175 T C [°C] -55 °C 25 °C 100 °C 150 °C 175 °C 0 10 20 30 40 50 60 70 02 468 V F [V] 1 0.7 0.5 0.3 0.1 0 10 20 30 40 50 60 70 25 50 75 100 125 150 175 T C [°C] -55 °C 55 °C 25 °C 100 °C 150 °C 175 °C 0 2 4 6 8 10 12 14 16 18 20 01 234 V F [V] Rev. 2.3 page 3 2009-08-04 |
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