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FST31120 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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FST31120 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page  FST31120 to FST31150 Dual Schottky Barrier Rectifiers PRV : 120 - 150 Volts Io : 30 Ampere FEATURES : * Guard ring for reverse protection * Low power loss * High efficiency * High surge capacity * Pb / RoHS Free MECHANICAL DATA : * Case : JEDEC TO-220AB molded plastic body * Terminals: Plated leads, solderable per MIL-STD-750 Method 2026 * Polarity: As marked * Mounting Position: Any * Weight : 2.24 grams (Approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(Ta =25°C unless otherwise noted.) SYMBOL FST31120 FST31130 FST31150 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 120 130 150 V Maximum Average Forward Rectified Total device 30 Current at TC = 153 °C Per Leg 15 Maximum Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load Per Leg Maximum Instantaneous Forward at IF = 15 A, TJ = 25 °C 0.85 Voltage Per Leg (1) IF = 15 A, TJ = 125 °C 0.72 Maximum Reverse Current Per Leg TJ = 25°C IR 250 μA at Working Peak Reverse Voltage (1) TJ = 125 °C IR(H) 1.0 mA Typical Junction Capacitance ( VR = 5 V, TJ = 25 °C) CJ 350 pF Maximum Thermal Resistance, Junction to Case, Per Leg RθJC 2.0 °C/W Operating Junction Temperature Range TJ - 55 to + 175 °C Storage Temperature Range TSTG - 55 to + 175 °C Note : (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. Page 1 of 2 Rev. 01 : October 13, 2006 A IF(AV) VF PARAMETER A IFSM 250 V 0.105(2.67) 0.095(2.41) PIN 2 0.205(5.20) 0.195(4.95) 0.635(16.13) 0.625(15.87) 0.055(1.39) 0.045(1.14) 0.145(3.68) 0.135(3.43) 0.160(4.06) 0.140(3.56) 0.603(15.32) 0.573(14.55) 0.560(14.22) 0.530(13.46) 0.350(8.89) 0.330(8.39) 0.185(4.70) 0.175(4.44) 0.037(0.94) 0.027(0.68) 0.415(10.54)MAX. 0.154(3.91)DIA. 0.148(3.74) 0.113(2.87) 0.103(2.62) PIN 1 PIN 3 CASE 0.022(0.56) 0.014(0.36) 13 2 TO-220AB Dimensions in inches and ( millimeters ) Certificate TH97/10561QM Certificate TW00/17276EM |
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