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FR103G Datasheet(PDF) 2 Page - EIC discrete Semiconductors

Part No. FR103G
Description  GLASS PASSIVATED JUNCTION
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Maker  EIC [EIC discrete Semiconductors]
Homepage  http://www.eicsemi.com
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FR103G Datasheet(HTML) 2 Page - EIC discrete Semiconductors

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RATING AND CHARACTERISTIC CURVES ( FR101G - FR107G )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
+
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.2 - DERATING CURVE FOR OUTPUT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT
FORWARD SURGE CURRENT
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60 100
AMBIENT TEMPERATURE, (
°C)
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Page 2 of 2
Rev. 02 : March 24, 2005
60Hz RESISTIVE OR INDUCTIVE LOAD
0.8
0.6
0.4
0.2
1.0
20
10
1.0
24
0
30
0
18
12
6
0.1
10
0.01
0.01
1.0
0.1
80
100
140
0
20
40
60
120
PERCENT OF RATED REVERSE VOLTAGE, (%)
TJ = 25
°C
TJ = 100
°C
TJ = 25
°C
Pulse W idth = 300
µs
2% Duty Cycle
8.3 ms SINGLE HALF SINE WAVE
Ta = 50
°C
SET TIME BASE FOR 50/100 ns/cm
Trr
+ 0.5
0
- 0.25
- 1.0 A
1
OSCILLOSCOPE
( NOTE 1 )
1
50
10
D.U.T.
50 Vdc
(approx
)
PULSE
GENERATOR
( NOTE 2 )
FORWARD VOLTAGE, VOLTS


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