PTFA190451F datasheet(6/10 Pages) INFINEON

Part #	PTFA190451F

Description	Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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6 / 10 page

Data Sheet

6 of 10

Rev. 03.1, 2009-02-20

PTFA190451E

PTFA190451F

Confidential, Limited Internal Distribution

R3

2K V

C3

0.001µF

C2

0.001µF

Q1

BCP56

R2

1.3K V

QQ1

LM7805

C1

0.001µF

VDD

R5

10 V

R4

2K V

R1

1.2K V

C9

10pF

l1

l10

R9

10 V

DUT

RF_IN

RF_OUT

l7

C6

1µF

C5

0.1µF

C4

10µF

35V

C7

0.01µF

R8

5.1K

C8

10pF

R7

1K V

R6

1K V

C10

2.8pF

l8

l9

l11

l13

C11

10pF

C13

1µF

C12

0.02µF

C14

22µF

50V

C15

0.7pF

C16

10pF

l2

l3

l4

l12

l5

l6

VDD

a190451ef_sch

Circuit Assembly Information

DUT

PTFA190451E or PTFA190451F

LDMOS Transistor

PCB

0.76 mm [.030"] thick,

εr = 3.48

Rogers 4350

1 oz. copper

Microstrip

Electrical Characteristics at 1960 MHz1

Dimensions: L x W ( mm) Dimensions: L x W (in.)

l1

0.031

λ, 50.0 Ω

2.79 x 1.57

0.110 x 0.062

l2

0.089

λ, 50.0 Ω

8.26 x 1.57

0.325 x 0.062

l3

0.076

λ, 50.0 Ω

7.04 x 1.57

0.277 x 0.062

l4

0.045

λ, 6.7 Ω

3.84 x 21.08

0.151 x 0.830

l5

0.014

λ, 6.7 Ω

1.14 x 21.08

0.045 x 0.830

l6

0.007

λ, 77.0 Ω

0.64 x 0.76

0.025 x 0.030

l7

0.123

λ, 72.0 Ω

11.66 x 0.89

0.459 x 0.035

l8

0.016

λ, 8.5 Ω

1.30 x 16.21

0.051 x 0.638

l9

0.096

λ, 8.5 Ω

8.13 x 16.21

0.320 x 0.638

l10

0.171

λ, 67.0 Ω

16.13 x 1.04

0.635 x 0.041

l11

0.053

λ, 41.0 Ω

4.80 x 2.31

0.189 x 0.091

l12

0.063

λ, 41.0 Ω

5.72 x 2.31

0.225 x 0.091

l13

0.030

λ, 54.0 Ω

2.79 x 1.52

0.110 x 0.060

1Electrical characteristics are rounded.

Reference Circuit

Reference circuit schematic for ƒ = 1960 MHz

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PTFA190451F Datasheet(PDF) 6 Page - Infineon Technologies AG

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