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FS14UM-9 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. FS14UM-9
Description  HIGH-SPEED SWITCHING USE
Download  4 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

FS14UM-9 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

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Feb.1999
MITSUBISHI Nch POWER MOSFET
FS14UM-9
HIGH-SPEED SWITCHING USE
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
V
V
µA
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
450
±30
2
4.5
3
0.40
2.8
7.0
1500
180
30
30
50
130
50
1.5
±10
1
4
0.52
3.6
2.0
0.83
ID = 1mA, VGS = 0V
IG =
±100µA, VDS = 0V
VGS =
±25V, VDS = 0V
VDS = 450V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 7A, VGS = 10V
ID = 7A, VGS = 10V
ID = 7A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50
IS = 7A, VGS = 0V
Channel to case
200
160
120
80
40
0
200
150
100
50
0
101
7
5
3
2
100
7
5
3
2
10–1
7
5
23 5 7 101 23 5 7 102 23 5 7 103
5
3
2
2
TC = 25°C
Single Pulse
tw=10µs
100µs
1ms
10ms
DC
20
16
12
8
4
0
0
4
8
12
16
20
PD = 150W
TC = 25°C
Pulse Test
VGS = 20V
10V
8V
6V
5V
50
40
30
20
10
0
0
1020304050
PD = 150W
TC = 25°C
Pulse Test
VGS=20V
10V
8V
6V
5V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
ELECTRICAL CHARACTERISTICS (Tch = 25
°C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
PERFORMANCE CURVES


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