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MCM63F837 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MCM63F837
Description  256K x 36 and 512K x 18 Bit Flow?밫hrough BurstRAM Synchronous Fast Static RAM
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MCM63F837 Datasheet(HTML) 1 Page - Motorola, Inc

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MCM63F837
•MCM63F919
1
MOTOROLA FAST SRAM
Product Preview
256K x 36 and 512K x 18 Bit
Flow–Through BurstRAM
Synchronous Fast Static RAM
The MCM63F837 and MCM63F919 are 8M–bit synchronous fast static RAMs
designed to provide a burstable, high performance, secondary cache for the
PowerPC
™ and other high performance microprocessors. The MCM63F837
(organized as 256K words by 36 bits) and the MCM63F919 (organized as 512K
words by 18 bits) are fabricated in Motorola’s high performance silicon gate
CMOS technology. Synchronous design allows precise cycle control with the
use of an external clock (K).
Addresses (SA), data inputs (DQx), and all control signals except output
enable (G), sleep mode (ZZ), and linear burst order (LBO) are clock (K)
controlled through positive–edge–triggered noninverting registers.
Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst
addresses can be generated internally by the MCM63F837 and MCM63F919
(burst sequence operates in linear or interleaved mode dependent upon the state
of LBO) and controlled by the burst address advance (ADV) input pin.
Write cycles are internally self–timed and are initiated by the rising edge of the
clock (K) input. This feature eliminates complex off–chip write pulse generation
and provides increased timing flexibility for incoming signals.
Synchronous byte write (SBx), synchronous global write (SGW), and
synchronous write enable (SW) are provided to allow writes to either individual
bytes or to all bytes. The bytes are designated as “a”, “b”, etc. SBa controls DQa,
SBb controls DQb, etc. Individual bytes are written if the selected byte writes SBx
are asserted with SW. All bytes are written if either SGW is asserted or if all SBx
and SW are asserted.
For read cycles, a flow–through SRAM allows output data to simply flow freely
from the memory array.
The MCM63F837 and MCM63F919 operate from a 3.3 V core power supply
and all outputs operate on a 2.5 V or 3.3 V power supply. All inputs and outputs
are JEDEC standard JESD8–A and JESD8–5 compatible.
• MCM63F837/MCM63F919–7 = 7 ns Access/8.5 ns Cycle (117 MHz)
MCM63F837/MCM63F919–8 = 8 ns Access/10 ns Cycle (100 MHz)
MCM63F837/MCM63F919–8.5 = 8.5 ns Access/11 ns Cycle (90 MHz)
• 3.3 V ±5% Core Power Supply, 2.5 V or 3.3 V I/O Supply
• ADSP, ADSC, and ADV Burst Control Pins
• Selectable Burst Sequencing Order (Linear/Interleaved)
• Single–Cycle Deselect Timing
• Internally Self–Timed Write Cycle
• Byte Write and Global Write Control
• Sleep Mode (ZZ)
• Simplified JTAG
• JEDEC Standard 100–Pin TQFP and 119–Bump PBGA Packages
The PowerPC name is a trademark of IBM Corp., used under license therefrom.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Order this document
by MCM63F837/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MCM63F837
MCM63F919
TQ PACKAGE
TQFP
CASE 983A–01
ZP PACKAGE
PBGA
CASE 999–02
REV 1
8/23/99
© Motorola, Inc. 1999
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com


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