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Product data sheet

Rev. 01 — 2 May 2005

3 of 15

Philips Semiconductors

TZA3026

SDH/SONET STM4/OC12 transimpedance amplifier

6.

Pinning information

6.1 Pinning

6.2 Pin description

Fig 2.

Pad configuration

001aac618

IDREF_MON

AGC

OUTQ

OUT

GND

GND

IDREF_MON

AGC

OUT

OUTQ

GND

GND

3

1

17

4

16

5

15

6

12

9

11

10

2

7

8

14

13

TZA3026

Table 2:

Bonding pad description

Bonding pad locations with respect to the center of the die (see Figure 10), X and Y are in

µm.

Symbol

Pad X

Y

Type

Description

DREF

1

−493.6 140

output

bias voltage output for PIN diode; connect cathode of PIN diode to

pad 1 or pad 3

IPHOTO

2

−493.6 0

input

current input; anode of PIN diode should be connected to this pad

DREF

3

−493.6 −140

output

bias voltage output for PIN diode; connect cathode of PIN diode to

pad 1 or pad 3

4

−353.6 −278.6 supply

supply voltage; connect supply voltage to pad 4 or pad 17

IDREF_MON

5

−213.6 −278.6 output

current output for RSSI measurements; connect a resistor to pad 5

or pad 16 and ground

AGC

6

−73.6

−278.6 input

AGC voltage; use pad 6 or pad 15

OUTQ

7

66.4

−278.6 output

data output; complement of pad OUT; use pad 7 or pad 13

OUT

8

206.4

−278.6 output

data output; use pad 8 or pad 14 [1]

GND

9

346.4

−278.6 ground

ground; connect together pads 9, 10, 11 and pad 12 as many as

possible

GND

10

486.4

−278.6 ground

ground; connect together pads 9, 10, 11 and pad 12 as many as

possible