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IKW03N120H2 Datasheet(PDF) 10 Page - Infineon Technologies AG

Part # IKW03N120H2
Description  HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKW03N120H2 Datasheet(HTML) 10 Page - Infineon Technologies AG

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IKP03N120H2
IKW03N120H2
Power Semiconductors
10
Rev. 2.5 Sept. 08
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
0V
200V
400V
600V
800V
0A
1A
2A
3A
10µs
100µs
1ms
10ms
10
-2K/W
10
-1K/W
10
0K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tp, PULSE WIDTH
tP, PULSE WIDTH
Figure 21. Typical turn off behavior, soft
switching
(VGE=15/0V, RG=82Ω, Tj = 150
°C,
Dynamic test circuit in Figure E)
Figure 22. Diode transient thermal
impedance as a function of pulse width
(D=tP/T)
0Ohm
100Ohm
200Ohm
300Ohm
40ns
60ns
80ns
100ns
120ns
140ns
160ns
180ns
T
J=150°C
T
J=25°C
0Ohm
100Ohm
200Ohm
300Ohm
0.2uC
0.3uC
0.4uC
0.5uC
0.6uC
T
J=150°C
T
J=25°C
RG, GATE RESISTANCE
RG, GATE RESISTANCE
Figure 23. Typical reverse recovery time
as a function of diode current slope
VR=800V, IF=3A,
Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery
charge as a function of diode current
slope
(VR=800V, IF=3A,
Dynamic test circuit in Figure E)
R
,(K/W)
τ , (s )
1.9222
7.04E-04
0.5852
2.02E-04
0.7168
4.39E-03
C 1=
τ1/R 1
R1
R 2
C 2=
τ2/R2


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