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IKW03N120H2 Datasheet(PDF) 10 Page - Infineon Technologies AG |
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IKW03N120H2 Datasheet(HTML) 10 Page - Infineon Technologies AG |
10 / 15 page IKP03N120H2 IKW03N120H2 Power Semiconductors 10 Rev. 2.5 Sept. 08 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0V 200V 400V 600V 800V 0A 1A 2A 3A 10µs 100µs 1ms 10ms 10 -2K/W 10 -1K/W 10 0K/W single pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 tp, PULSE WIDTH tP, PULSE WIDTH Figure 21. Typical turn off behavior, soft switching (VGE=15/0V, RG=82Ω, Tj = 150 °C, Dynamic test circuit in Figure E) Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T) 0Ohm 100Ohm 200Ohm 300Ohm 40ns 60ns 80ns 100ns 120ns 140ns 160ns 180ns T J=150°C T J=25°C 0Ohm 100Ohm 200Ohm 300Ohm 0.2uC 0.3uC 0.4uC 0.5uC 0.6uC T J=150°C T J=25°C RG, GATE RESISTANCE RG, GATE RESISTANCE Figure 23. Typical reverse recovery time as a function of diode current slope VR=800V, IF=3A, Dynamic test circuit in Figure E) Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=800V, IF=3A, Dynamic test circuit in Figure E) R ,(K/W) τ , (s ) 1.9222 7.04E-04 0.5852 2.02E-04 0.7168 4.39E-03 C 1= τ1/R 1 R1 R 2 C 2= τ2/R2 |
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