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IKW03N120H2 Datasheet(PDF) 8 Page - Infineon Technologies AG

Part # IKW03N120H2
Description  HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKW03N120H2 Datasheet(HTML) 8 Page - Infineon Technologies AG

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IKP03N120H2
IKW03N120H2
Power Semiconductors
8
Rev. 2.5 Sept. 08
0A
2A
4A
0.0mJ
0.5mJ
1.0mJ
E
on
1
E
off
E
ts
1
0
Ω
50
Ω
100
Ω
150
Ω
200
Ω
250
Ω
0.2mJ
0.3mJ
0.4mJ
0.5mJ
0.6mJ
0.7mJ
E
on
1
E
ts
1
E
off
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150
°C,
VCE = 800V, VGE = +15V/0V, RG = 82
Ω,
dynamic test circuit in Fig.E )
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150
°C,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E )
25°C
80°C
125°C
150°C
0.1mJ
0.2mJ
0.3mJ
0.4mJ
0.5mJ
E
ts
1
E
on
1
E
off
0V/us
1000V/us
2000V/us
3000V/us
0.00mJ
0.04mJ
0.08mJ
0.12mJ
0.16mJ
I
C=1A, TJ=150°C
I
C=1A, TJ=25°C
I
C=3A, TJ=150°C
I
C=3A, TJ=25°C
Tj, JUNCTION TEMPERATURE
dv/dt, VOLTAGE SLOPE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82
Ω,
dynamic test circuit in Fig.E )
Figure 16. Typical turn off switching energy
loss for soft switching
(dynamic test circuit in Fig. E)
1) Eon and Ets include losses
due to diode recovery.
1) Eon and Ets include losses
due to diode recovery.
1) Eon and Ets include losses
due to diode recovery.


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