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IKW03N120H2 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IKW03N120H2 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 15 page IKP03N120H2 IKW03N120H2 Power Semiconductors 3 Rev. 2.5 Sept. 08 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 9.2 - Rise time tr - 5.2 - Turn-off delay time td(off) - 281 - Fall time tf - 29 - ns Turn-on energy Eon - 0.14 - Turn-off energy Eoff - 0.15 - Total switching energy Ets Tj=25 °C, VCC=800V, IC=3A, VGE=15V/0V, RG=82 Ω, Lσ 2) =180nH, Cσ 2) =40pF Energy losses include “tail” and diode 3) reverse recovery. - 0.29 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 42 - ns Diode reverse recovery charge Qrr - 0.23 - µC Diode peak reverse recovery current Irrm - 10.3 - A Diode current slope diF/dt - 993 - Diode peak rate of fall of reverse recovery current during tb dirr/dt Tj=25 °C, VR=800V, IF=3A, RG=82 Ω - 1180 - A/ µs Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 9.4 - Rise time tr - 6.7 - Turn-off delay time td(off) - 340 - Fall time tf - 63 - ns Turn-on energy Eon - 0.22 - Turn-off energy Eoff - 0.26 - Total switching energy Ets Tj=150 °C VCC=800V, IC=3A, VGE=15V/0V, RG=82 Ω, Lσ 2) =180nH, Cσ 2) =40pF Energy losses include “tail” and diode 3) reverse recovery. - 0.48 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 125 - ns Diode reverse recovery charge Qrr - 0.51 - µC Diode peak reverse recovery current Irrm - 12 - A Diode current slope diF/dt - 829 - Diode peak rate of fall of reverse recovery current during tb dirr/dt Tj=150 °C VR=800V, IF=3A, RG=82 Ω - 540 - A/ µs 2) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E 3) Commutation diode from device IKP03N120H2 |
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