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IHW40N60T Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IHW40N60T Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 12 page IHW40N60T Soft Switching Series q Power Semiconductors 1 Rev. 2.3 Sep. 08 Low Loss DuoPack : IGBT in TrenchStop® -technology with anti-parallel diode Features: • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5 µs • TrenchStop ® and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCE(sat) • Positive temperature coefficient in VCE(sat) • Low EMI • Low Gate Charge • Qualified according to JEDEC 1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: • Inductive Cooking • Soft Switching Applications Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package IHW40N60T 600V 40A 1.55V 175 °C H40T60 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current, limited by Tjmax TC = 25 °C TC = 100 °C IC 80 40 Pulsed collector current, tp limited by Tjmax ICpuls 120 Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 120 Diode forward current, limited by Tjmax TC = 25 °C TC = 100 °C IF 40 20 Diode pulsed current, tp limited by Tjmax IFpuls 60 A Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) VGE ±20 ±25 V Short circuit withstand time 2) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C tSC 5 µs Power dissipation TC = 25 °C Ptot 303 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 °C 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E PG-TO-247-3 |
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