PTF080101M datasheet(4/8 Pages) INFINEON

Part #	PTF080101M

Description	High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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4 / 8 page

Data Sheet

4 of 8

Rev. 02.1, 2009-02-18

PTF080101M

Gate-Source Voltage vs. Temperature

Voltage normalized to typical gate voltage,

series show current.

0.96

0.97

0.98

0.99

1.00

1.01

1.02

1.03

1.04

-20

0

20

40

60

80

100

Case Temperature (ºC)

0.05

0.28

0.51

0.74

0.97

1.2

Typical Performance (cont.)

Broadband Circuit Impedance

Z Source

Z Load

G

S

D

Frequency

Z Source

Ω

Z Load

Ω

MHz

R

jX

R

jX

820

3.73

2.10

10.41

3.92

840

3.81

2.22

9.61

4.14

860

3.83

2.30

9.00

4.48

880

3.76

2.39

8.55

4.89

900

3.61

2.50

8.24

5.32

920

3.37

2.69

8.02

5.76

940

3.08

2.96

7.89

6.20

960

2.76

3.35

7.84

6.63

980

2.43

3.86

7.85

7.04

1000

2.13

4.47

7.91

7.43

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PTF080101M Datasheet(PDF) 4 Page - Infineon Technologies AG

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