IDH08S120 datasheet(4/6 Pages) INFINEON

Part #	IDH08S120

Description	thinQ SiC Schottky Diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IDH08S120

5 Typ. capacitance charge vs. current slope

6 Transient thermal impedance

Q C=f(di F/dt )

4); T

j=150 °C; I F≤I F,max

Z thJC=f(t p)

parameter: D =t p/T

0

0.02

0.05

0.1

0.2

0.5

10-5

10-4

10-3

10-2

10-1

10-3

10-2

10-1

100

101

t [s]

0

5

10

15

20

25

30

100

400

700

1000

di

F/dt [A/µs]

Rev. 2.0

page 4

2010-04-20

7 Typ. capacitance vs. reverse voltage

8 Typ. C stored energy

C

=f(V R); T C=25 °C, f =1 MHz

E C=f(V R)

0

0.02

0.05

0.1

0.2

0.5

10-5

10-4

10-3

10-2

10-1

10-3

10-2

10-1

100

101

t [s]

0

5

10

15

20

25

30

100

400

700

1000

di

F/dt [A/µs]

0

100

200

300

400

1

10

100

1000

V

R [V]

0

1

2

3

4

5

6

7

0

200

400

600

V

R [V]

Rev. 2.0

page 4

2010-04-20

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IDH08S120 Datasheet(PDF) 4 Page - Infineon Technologies AG

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