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MC9S08QD4CSC Datasheet(PDF) 39 Page - Freescale Semiconductor, Inc |
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MC9S08QD4CSC Datasheet(HTML) 39 Page - Freescale Semiconductor, Inc |
39 / 198 page Chapter 4 Memory Map and Register Definition MC9S08QD4 Series MCU Data Sheet, Rev. 6 Freescale Semiconductor 39 Aborting a command in this way sets the FACCERR access error flag which must be cleared before starting a new command. A strictly monitored procedure must be obeyed or the command will not be accepted. This minimizes the possibility of any unintended changes to the flash memory contents. The command complete flag (FCCF) indicates when a command is complete. The command sequence must be completed by clearing FCBEF to launch the command. Figure 4-2 is a flowchart for executing all of the commands except for burst programming. The FCDIV register must be initialized following any reset before using any flash commands. Figure 4-2. Flash Program and Erase Flowchart 4.5.4 Burst Program Execution The burst program command is used to program sequential bytes of data in less time than would be required using the standard program command. This is possible because the high voltage to the flash array does not need to be disabled between program operations. Ordinarily, when a program or erase command is issued, an internal charge pump associated with the flash memory must be enabled to supply high voltage to the array. Upon completion of the command, the charge pump is turned off. When a burst START WRITE TO FLASH TO BUFFER ADDRESS AND DATA WRITE COMMAND TO FCMD NO YES FPVIO OR WRITE 1 TO FCBEF TO LAUNCH COMMAND AND CLEAR FCBEF (2) 1 0 FCCF ? ERROR EXIT DONE (2) Wait at least four bus cycles before checking FCBEF or FCCF. 0 FACCERR ? CLEAR ERROR FACCERR ? WRITE TO FCDIV(1) (1) Required only once after reset. |
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